Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
نویسندگان
چکیده
Chuanbo Li , Kouichi Usami, Gento Yamahata, Yoshishige Tsuchiya, Hiroshi Mizuta, and Shunri Oda Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan School of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire, SO17 1BJ, U.K. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan Solution Oriented Research for Science and Technology (SORST), Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
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Low-temperature synthesis of single-crystal germanium nanowires by chemical vapor deposition.
Chemically derived nanowire materials have attracted much attention because of their interesting geometries, properties, and potential applications.[1±3] Various methods have been developed for synthesizing semiconducting nanowires including laser ablation,[2,3] physical vapor deposition under high temperatures,[3±7] and solvothermal growth under high pressures and moderate temperatures.[3,8±10...
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